Trimethylsilane or trimethylsilyl hydride, is a gas at ambient conditions with the formula C3H10Si. It is very flammable. Trimethylsilane is used in the semi-conductor industry as precursor to deposit dielectrics and barrier layers via plasma-enhanced chemical vapor deposition (PE-CVD).. It is also used a source gas to deposit TiSiCN hard coatings via plasma-enhanced magnetron sputtering (PEMS). It has also been used to deposit silicon carbide hard coatings via low-pressure chemical vapor deposition (LP-CVD) at relatively low temperatures <1000oC. It is an expensive gas but safer to use than silane (SiH4); and produces properties in the coatings that cannot be undertaken by multiple source gases containing silicon and carbon.
3D model (JSmol)
|Molar mass||74.198 g·mol−1|
|Density||0.638 g cm−3|
|Melting point||−135.9 °C (−212.6 °F; 137.2 K)|
|Boiling point||6.7 °C (44.1 °F; 279.8 K)|
|R-phrases (outdated)||R12, R36/37/38|
|S-phrases (outdated)||S9, S16, S26, S33|
|NFPA 704 (fire diamond)|
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
- Chen, Sheng-Wen; Wang, Yu-Sheng; Hu, Shao-Yu; Lee, Wen-Hsi; Chi, Chieh-Cheng; Wang, Ying-Lang (2012). "A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films". Materials. 5 (3): 377. doi:10.3390/ma5030377. PMC 5448926.