Trimethylsilane

Trimethylsilane or trimethylsilyl hydride, is a gas at ambient conditions with the formula C3H10Si. It is very flammable. Trimethylsilane is used in the semi-conductor industry as precursor to deposit dielectrics and barrier layers via plasma-enhanced chemical vapor deposition (PE-CVD).[1]. It is also used a source gas to deposit TiSiCN hard coatings via plasma-enhanced magnetron sputtering (PEMS). It has also been used to deposit silicon carbide hard coatings via low-pressure chemical vapor deposition (LP-CVD) at relatively low temperatures <1000oC. It is an expensive gas but safer to use than silane (SiH4); and produces properties in the coatings that cannot be undertaken by multiple source gases containing silicon and carbon.

Trimethylsilane
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.012.366
Properties
C3H10Si
Molar mass 74.198 g·mol−1
Density 0.638 g cm−3
Melting point −135.9 °C (−212.6 °F; 137.2 K)
Boiling point 6.7 °C (44.1 °F; 279.8 K)
Hazards
F
R-phrases (outdated) R12, R36/37/38
S-phrases (outdated) S9, S16, S26, S33
NFPA 704 (fire diamond)
4
2
1
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references

See also

References

  1. Chen, Sheng-Wen; Wang, Yu-Sheng; Hu, Shao-Yu; Lee, Wen-Hsi; Chi, Chieh-Cheng; Wang, Ying-Lang (2012). "A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films". Materials. 5 (3): 377. doi:10.3390/ma5030377. PMC 5448926.


This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.