Aluminium gallium nitride
The bandgap of AlxGa1−xN can be tailored from 3.4eV (xAl=0) to 6.2eV (xAl=1).
Safety and toxicity aspects
The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium nitride sources (such as trimethylgallium and ammonia) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review.
- Growth and Characterization of Aluminum Gallium Nitride...
- Shenai-Khatkhate, D. V.; Goyette, R.; DiCarlo, R. L. Jr.; Dripps, G. (2004). "Environment, Health and Safety Issues for Sources Used in MOVPE Growth of Compound Semiconductors". Journal of Crystal Growth. 272 (1–4): 816–821. doi:10.1016/j.jcrysgro.2004.09.007.